| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-529-2685 (005292685) |
| NCB Code | USA (00) |
| Manufacturer | Joint Electron Device Engineering, Freescale Semiconductor Inc, Electronic Industries Inc, Central States Maintenance Inc, Harsco Corporation, Hewlett-Packard Company, Adelco Elektronik Gmbh, Fairchild Semiconductor Corp, Northrop Grumman Systems Corporation, Alcatel Lucent, Raytheon Company, Military Specifications, Honeywell International Inc, Joint Army-Navy Specifications, Bae Systems Inc, Lacon Electronic Gmbh, Telcom Semiconductor Inc |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| 1N751 | joint electron device engineering | semiconductor device diode | RFQ |
| 1N751B | freescale semiconductor inc | semiconductor device diode | RFQ |
| 1N7518 | electronic industries inc | semiconductor device diode | RFQ |
| 168870-4 | central states maintenance inc | semiconductor device diode | RFQ |
| 1N751A | harsco corporation | semiconductor device diode | RFQ |
| 1902-0041 | hewlett-packard company | semiconductor device diode | RFQ |
| 185-0065 | harsco corporation | semiconductor device diode | RFQ |
| 1N751B | adelco elektronik gmbh | semiconductor device diode | RFQ |
| 1N751B | electronic industries inc | semiconductor device diode | RFQ |
| 1N5231C | fairchild semiconductor corp | semiconductor device diode | RFQ |
| 1080H80H17 | northrop grumman systems corporation | semiconductor device diode | RFQ |
| 712 ITT 04020 SAAT | alcatel lucent | semiconductor device diode | RFQ |
| F00001-50 | raytheon company | semiconductor device diode | RFQ |
| JAN1N751A | military specifications | semiconductor device diode | RFQ |
| 12043-0117 | honeywell international inc | semiconductor device diode | RFQ |
| 1081H34H12 | northrop grumman systems corporation | semiconductor device diode | RFQ |
| JAN1N751A | joint army-navy specifications | semiconductor device diode | RFQ |
| 1N751A | bae systems inc | semiconductor device diode | RFQ |
| 2088809-72 | honeywell international inc | semiconductor device diode | RFQ |
| 1N751BA | adelco elektronik gmbh | semiconductor device diode | RFQ |
| 2088809-0072 | honeywell international inc | semiconductor device diode | RFQ |
| 1N751B | lacon electronic gmbh | semiconductor device diode | RFQ |
| 1N751B | telcom semiconductor inc | semiconductor device diode | RFQ |
| TX1N751A | military specifications | semiconductor device diode | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.300 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES NOMINAL |
| ADAV | OVERALL DIAMETER | 0.115 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 5.1 MAXIMUM NOMINAL REGULATOR VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 20.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| Relevant Components for NSN - 5961-00-529-2685, 5961005292685 | ||||
| 5920-01-337-7645 (5920013377645) | 5995-01-688-0358 (5995016880358) | 5935-01-132-7705 (5935011327705) | 5910-00-152-4145 (5910001524145) | |
| 5945-01-363-9722 (5945013639722) | 5975-01-032-9067 (5975010329067) | 5998-01-433-6008 (5998014336008) | 5970-01-298-0394 (5970012980394) | |
| 5998-01-674-4887 (5998016744887) | 5935-01-294-4644 (5935012944644) | 5975-01-216-8288 (5975012168288) | 5915-00-412-1691 (5915004121691) | |
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