| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| 1N600 | gilbert engineering co inc | semiconductor device diode | RFQ |
| DMS 89034B | dla land and maritime | semiconductor device diode | RFQ |
| 1N1692 | general semiconductor inc | semiconductor device diode | RFQ |
| 1786609-3 | master spline tool and gage co | semiconductor device diode | RFQ |
| 1N1692 | ampex systems corp | semiconductor device diode | RFQ |
| 1N1692 | electronic industries inc | semiconductor device diode | RFQ |
| 1N4408 | diodes inc | semiconductor device diode | RFQ |
| 1N1220 | gilbert engineering co inc | semiconductor device diode | RFQ |
| 1N538 | military specifications | semiconductor device diode | RFQ |
| 1N537 | general electric company | semiconductor device diode | RFQ |
| 17-01-71 | lct electronics | semiconductor device diode | RFQ |
| 1N1218 | joint electron device engineering | semiconductor device diode | RFQ |
| EIA1715 | electronic industries inc | semiconductor device diode | RFQ |
| 1N538 | ampex data systems corporation | semiconductor device diode | RFQ |
| JAN1N538 | joint army-navy specifications | semiconductor device diode | RFQ |
| 1N538M | freescale semiconductor inc | semiconductor device diode | RFQ |
| JHP85-478 | hollingsworth john r co | semiconductor device diode | RFQ |
| JAN1N364 | military specifications | semiconductor device diode | RFQ |
| 2156251 | itt industries limited | semiconductor device diode | RFQ |
| 1N1692 | general instrument corporation | semiconductor device diode | RFQ |
| 1N538 | general electric company | semiconductor device diode | RFQ |
| IN538M | electronic industries inc | semiconductor device diode | RFQ |
| PT520 | general instrument corporation | semiconductor device diode | RFQ |
| 1N600 | electronic industries inc | semiconductor device diode | RFQ |
| JAN1N538M | military specifications | semiconductor device diode | RFQ |
| G181-624-0001 | kearfott corporation | semiconductor device diode | RFQ |
| 157770 | sypris electronics llc | semiconductor device diode | RFQ |
| 3BS1 | infineon technologies | semiconductor device diode | RFQ |
| 1N1692 | texas instruments inc | semiconductor device diode | RFQ |
| 1N1487 | general electric company | semiconductor device diode | RFQ |
| 1N538 | rca ltd | semiconductor device diode | RFQ |
| RELEASE2305 | electronic industries inc | semiconductor device diode | RFQ |
| FBL00-042 | veeco instruments inc | semiconductor device diode | RFQ |
| 5961005776214 | eca etablissement central des | semiconductor device diode | RFQ |
| 291651-22 | honeywell international inc | semiconductor device diode | RFQ |
| 1N599 | general semiconductor inc | semiconductor device diode | RFQ |
| 1N600 | ampex data systems corporation | semiconductor device diode | RFQ |
| 1N440B | general electric company | semiconductor device diode | RFQ |
| 202862-138 | bae systems information | semiconductor device diode | RFQ |
| IN538M1LS19500-202A | raytheon company | semiconductor device diode | RFQ |
| 1N537 | intersil corporation | semiconductor device diode | RFQ |
| 1N1487 | joint electron device engineering | semiconductor device diode | RFQ |
| 343-212-034 | interstate electronics corporation | semiconductor device diode | RFQ |
| 1N1218 | kearfott corporation | semiconductor device diode | RFQ |
| 1N91 | military specifications | semiconductor device diode | RFQ |
| IN538 | electronic industries inc | semiconductor device diode | RFQ |
| 1N600 | infineon technologies | semiconductor device diode | RFQ |
| 291651-0022 | honeywell international inc | semiconductor device diode | RFQ |
| 1N538M | military specifications | semiconductor device diode | RFQ |
| 1N538 | joint army-navy specifications | semiconductor device diode | RFQ |
| 51339-8-46 | hevi duty electric sola basic | semiconductor device diode | RFQ |
| 1N358 | military specifications | semiconductor device diode | RFQ |
| J94-0144 | ward leonard electric company inc | semiconductor device diode | RFQ |
| JAN1N531A | military specifications | semiconductor device diode | RFQ |
| 00614-0086-0 | electronic associates inc | semiconductor device diode | RFQ |
| 2600-6800 | dumont electric corp | semiconductor device diode | RFQ |
| MIL-S-19500/202 | military specifications | semiconductor device diode | RFQ |
| 1N536 | freescale semiconductor inc | semiconductor device diode | RFQ |
| 1N536 | military specifications | semiconductor device diode | RFQ |
| 232-1148P5 | raytheon company | semiconductor device diode | RFQ |
| IN538M | military specifications | semiconductor device diode | RFQ |
| 1N538MILS19500-202 | military specifications | semiconductor device diode | RFQ |
| 232-1148P1 | raytheon company | semiconductor device diode | RFQ |
| 1N4408 | military specifications | semiconductor device diode | RFQ |
| 3AS1 | infineon technologies | semiconductor device diode | RFQ |
| 5961PL0901538 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | RFQ |
| 352250009902 | thales nederland bv | semiconductor device diode | RFQ |
| 353-1648-000 | rockwell collins aerospace | semiconductor device diode | RFQ |
| VBE890-1N538 | thales nederland bv | semiconductor device diode | RFQ |
| 8850901 | picatinny arsenal | semiconductor device diode | RFQ |
| 1N91 | solitron devices inc | semiconductor device diode | RFQ |
| 1N91 | northrop grumman systems corporation | semiconductor device diode | RFQ |
| 1N600 | texas instruments inc | semiconductor device diode | RFQ |
| 202862-138 | stromberg carlson corp | semiconductor device diode | RFQ |
| IN1220 | protospec | semiconductor device diode | RFQ |
| JAN1N538 | military specifications | semiconductor device diode | RFQ |
| 1N538 | joint electron device engineering | semiconductor device diode | RFQ |
| GS5460-616 | hamilton sundstrand corporation | semiconductor device diode | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.800 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.310 INCHES MINIMUM AND 0.400 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CRTL | CRITICALITY CODE JUSTIFICATION | FEAT |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 240.0 MAXIMUM REVERSE VOLTAGE,INSTANTANEOUS AND 140.0 MAXIMUM REVERSE VOLTAGE,TOTAL RMS |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 750.00 MILLIAMPERES MAXIMUM FORWARD CURRENT,DC |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
| FEAT | SPECIAL FEATURES | WEAPON SYSTEM ESSENTIAL |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/202 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5961-00-577-6214, 5961005776214 | ||||
| 5920-01-337-7645 (5920013377645) | 5995-01-688-0358 (5995016880358) | 5935-01-132-7705 (5935011327705) | 5910-00-152-4145 (5910001524145) | |
| 5945-01-363-9722 (5945013639722) | 5975-01-032-9067 (5975010329067) | 5998-01-433-6008 (5998014336008) | 5970-01-298-0394 (5970012980394) | |
| 5998-01-674-4887 (5998016744887) | 5935-01-294-4644 (5935012944644) | 5975-01-216-8288 (5975012168288) | 5915-00-412-1691 (5915004121691) | |
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