| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-849-4186 (008494186) |
| NCB Code | USA (00) |
| Manufacturer | Hamilton Sundstrand Corporation, Joint Army-Navy Specifications, Raytheon Company, N A P Smd Technology Inc, Adelco Elektronik Gmbh, Dare Electronics Inc, Interstate Electronics Corporation, Solitron Devices Inc, Northrop Grumman Systems Corporation, Military Specifications, Martin Marietta Technologies Inc, Dynalec Corporation, Freescale Semiconductor Inc, Reliance Comm Tec Corp, Itt Telecom Products Corp, Texas Instruments Inc, Rockwell Collins Aerospace, Delamore Companies The, Inspektorat Wsparcia Sil Zbrojnych, Electronic Industries Inc, Tektronix Gmbh, Thales Defense And Security Inc |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| 562267-57 | hamilton sundstrand corporation | semiconductor device diode | RFQ |
| JAN1N3027B | joint army-navy specifications | semiconductor device diode | RFQ |
| 4178600-107 | raytheon company | semiconductor device diode | RFQ |
| 1N1778A | n a p smd technology inc | semiconductor device diode | RFQ |
| JAN1N3027BA | adelco elektronik gmbh | semiconductor device diode | RFQ |
| 231051043 | dare electronics inc | semiconductor device diode | RFQ |
| 343-223-013 | interstate electronics corporation | semiconductor device diode | RFQ |
| 1R20B | solitron devices inc | semiconductor device diode | RFQ |
| 141-001-0214 | northrop grumman systems corporation | semiconductor device diode | RFQ |
| 1N3027 | military specifications | semiconductor device diode | RFQ |
| 1024D0572-27 | martin marietta technologies inc | semiconductor device diode | RFQ |
| 16110-020 | dynalec corporation | semiconductor device diode | RFQ |
| IN3027B | freescale semiconductor inc | semiconductor device diode | RFQ |
| JAN1N3027B-1 | military specifications | semiconductor device diode | RFQ |
| 1N1778 | military specifications | semiconductor device diode | RFQ |
| 2836-379 | reliance comm tec corp | semiconductor device diode | RFQ |
| 3371359 | itt telecom products corp | semiconductor device diode | RFQ |
| 1N3027B | joint army-navy specifications | semiconductor device diode | RFQ |
| 848007-1 | raytheon company | semiconductor device diode | RFQ |
| JAN1N3027B | military specifications | semiconductor device diode | RFQ |
| HW20B | texas instruments inc | semiconductor device diode | RFQ |
| 1M20Z10 | freescale semiconductor inc | semiconductor device diode | RFQ |
| 353-3057-000 | rockwell collins aerospace | semiconductor device diode | RFQ |
| MIL-PRF-19500/115 | military specifications | semiconductor device diode | RFQ |
| IN3027 | military specifications | semiconductor device diode | RFQ |
| 1N1778A | texas instruments inc | semiconductor device diode | RFQ |
| 1N3027A | delamore companies the | semiconductor device diode | RFQ |
| 5961PL0800951 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | RFQ |
| 1N3027 | electronic industries inc | semiconductor device diode | RFQ |
| 1R20A | solitron devices inc | semiconductor device diode | RFQ |
| 152-0291-00 | tektronix gmbh | semiconductor device diode | RFQ |
| 81349 | texas instruments inc | semiconductor device diode | RFQ |
| 848007-0001 | thales defense and security inc | semiconductor device diode | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAV | OVERALL DIAMETER | 0.215 INCHES MINIMUM AND 0.265 INCHES MAXIMUM |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 NOMINAL NOMINAL REGULATOR VOLTAGE |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | GLASS INCLOSURE |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-PRF-19500/115 GOVERNMENT SPECIFICATION |
| ABHP | OVERALL LENGTH | 0.195 INCHES MINIMUM AND 0.350 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | CATHODE |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 12.50 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 47.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION |
| CTRD | POWER RATING PER CHARACTERISTIC | 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLEC |
| Relevant Components for NSN - 5961-00-849-4186, 5961008494186 | ||||
| 5920-01-337-7645 (5920013377645) | 5995-01-688-0358 (5995016880358) | 5935-01-132-7705 (5935011327705) | 5910-00-152-4145 (5910001524145) | |
| 5945-01-363-9722 (5945013639722) | 5975-01-032-9067 (5975010329067) | 5998-01-433-6008 (5998014336008) | 5970-01-298-0394 (5970012980394) | |
| 5998-01-674-4887 (5998016744887) | 5935-01-294-4644 (5935012944644) | 5975-01-216-8288 (5975012168288) | 5915-00-412-1691 (5915004121691) | |
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