| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| FBM-Z109 | veeco instruments inc | semiconductor device diode | RFQ |
| 20-01001-001 | raytheon company | semiconductor device diode | RFQ |
| 1N963A | freescale semiconductor inc | semiconductor device diode | RFQ |
| SZ10939+206 | freescale semiconductor inc | semiconductor device diode | RFQ |
| 1N963A | military specifications | semiconductor device diode | RFQ |
| 1N963B | semicon components inc | semiconductor device diode | RFQ |
| 353-3085-000 | rockwell collins aerospace | semiconductor device diode | RFQ |
| 1901-3182 | hewlett-packard company | semiconductor device diode | RFQ |
| 121-0058 | kepco inc | semiconductor device diode | RFQ |
| 152-0168-00 | ampex systems corp | semiconductor device diode | RFQ |
| Q68000A2425Z | airbus defence and space limited | semiconductor device diode | RFQ |
| 40020228-000 | dne technologies inc | semiconductor device diode | RFQ |
| 12043-0090 | honeywell international inc | semiconductor device diode | RFQ |
| 1N963B | military specifications | semiconductor device diode | RFQ |
| 2700963A | eip microwave inc | semiconductor device diode | RFQ |
| 2720963-00 | eip microwave inc | semiconductor device diode | RFQ |
| 1N963 | freescale semiconductor inc | semiconductor device diode | RFQ |
| 864054 | qes ltd | semiconductor device diode | RFQ |
| 013-313 | inolex corp | semiconductor device diode | RFQ |
| 1N963B | international rectifier corporation | semiconductor device diode | RFQ |
| 1N963B | joint electron device engineering | semiconductor device diode | RFQ |
| CD35730 | telcom semiconductor inc | semiconductor device diode | RFQ |
| 100390 | systron donner corp | semiconductor device diode | RFQ |
| 1N963 | military specifications | semiconductor device diode | RFQ |
| 152-0168-00 | tektronix gmbh | semiconductor device diode | RFQ |
| MIL-PRF-19500/117 | military specifications | semiconductor device diode | RFQ |
| 1N9633B | military specifications | semiconductor device diode | RFQ |
| MIL-PRF-19500 | military specifications | semiconductor device diode | RFQ |
| 848068-0001 | thales defense and security inc | semiconductor device diode | RFQ |
| 1N963B | newark electronics corporation | semiconductor device diode | RFQ |
| 947060-9632 | litton systems inc | semiconductor device diode | RFQ |
| SZG35009K4 | freescale semiconductor inc | semiconductor device diode | RFQ |
| MIL-S-19500/117 | military specifications | semiconductor device diode | RFQ |
| JAN1N963B | military specifications | semiconductor device diode | RFQ |
| 104-310-263 | l 3 communications corporation | semiconductor device diode | RFQ |
| 352250009935 | thales nederland bv | semiconductor device diode | RFQ |
| 20-00146-003 | raytheon systems ltd | semiconductor device diode | RFQ |
| 418150-2 | raytheon company | semiconductor device diode | RFQ |
| 033157 | simmonds precision products inc | semiconductor device diode | RFQ |
| 1N963B | telcom semiconductor inc | semiconductor device diode | RFQ |
| 1N963A | telcom semiconductor inc | semiconductor device diode | RFQ |
| VBE890-1N963B | thales nederland bv | semiconductor device diode | RFQ |
| 4178600-197 | raytheon company | semiconductor device diode | RFQ |
| 437416 | raytheon technical services company | semiconductor device diode | RFQ |
| 848136-0012 | thales defense and security inc | semiconductor device diode | RFQ |
| 1N963B | texas instruments inc | semiconductor device diode | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | GLASS INCLOSURE |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/117 GOVERNMENT SPECIFICATION |
| ABHP | OVERALL LENGTH | 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 12.0 MAXIMUM NOMINAL REGULATOR VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 32.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| Relevant Components for NSN - 5961-00-892-1009, 5961008921009 | ||||
| 5920-01-337-7645 (5920013377645) | 5995-01-688-0358 (5995016880358) | 5935-01-132-7705 (5935011327705) | 5910-00-152-4145 (5910001524145) | |
| 5945-01-363-9722 (5945013639722) | 5975-01-032-9067 (5975010329067) | 5998-01-433-6008 (5998014336008) | 5970-01-298-0394 (5970012980394) | |
| 5998-01-674-4887 (5998016744887) | 5935-01-294-4644 (5935012944644) | 5975-01-216-8288 (5975012168288) | 5915-00-412-1691 (5915004121691) | |
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