| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| 44397 28755 | thales electronic systems gmbh | semiconductor device diode | RFQ |
| 78500891 | ericsson information system a s | semiconductor device diode | RFQ |
| 15-1750A1 | emergency beacon corp | semiconductor device diode | RFQ |
| 1534864-19 | allied signal inc | semiconductor device diode | RFQ |
| 353-2977-002 | rockwell collins aerospace | semiconductor device diode | RFQ |
| X00487 | mbda incorporated | semiconductor device diode | RFQ |
| 1-112057 | charles industries ltd | semiconductor device diode | RFQ |
| 26-211 | raytheon company | semiconductor device diode | RFQ |
| 54732-22 | digital development corp | semiconductor device diode | RFQ |
| 54732-33 | digital development corp | semiconductor device diode | RFQ |
| 68415014008 | kollsman inc | semiconductor device diode | RFQ |
| Q62702-Z587-Z | epcos ag | semiconductor device diode | RFQ |
| 943-0202-0008 | leonardo spa airborne and space | semiconductor device diode | RFQ |
| 943-0202-0008 | leonardo spa aircraft division | semiconductor device diode | RFQ |
| JAN1N750AA | adelco elektronik gmbh | semiconductor device diode | RFQ |
| 5339-093009 | aai corporation | semiconductor device diode | RFQ |
| 1N750A | general electric company | semiconductor device diode | RFQ |
| 05-10010-0A | ballantine laboratories inc | semiconductor device diode | RFQ |
| 1299116-18 | honeywell international inc | semiconductor device diode | RFQ |
| 5961PL0835025 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | RFQ |
| 943-0202-0008 | alenia sistemi difesa spa | semiconductor device diode | RFQ |
| 947060-7501 | litton systems inc | semiconductor device diode | RFQ |
| 353-2708-000 | rockwell collins aerospace | semiconductor device diode | RFQ |
| 6083-1028 | genrad ltd | semiconductor device diode | RFQ |
| 848090-0001 | thales defense and security inc | semiconductor device diode | RFQ |
| MIL-S-19500/127 | military specifications | semiconductor device diode | RFQ |
| 40020049-000 | dne technologies inc | semiconductor device diode | RFQ |
| JAN1N750 | military specifications | semiconductor device diode | RFQ |
| 352250009916 | thales nederland bv | semiconductor device diode | RFQ |
| 48-29900D69 | motorola inc | semiconductor device diode | RFQ |
| VBE890-1N750A | thales nederland bv | semiconductor device diode | RFQ |
| KS78605B4-7V | ericsson information system a s | semiconductor device diode | RFQ |
| M57-80 | miltope corporation | semiconductor device diode | RFQ |
| 1N750 | telcom semiconductor inc | semiconductor device diode | RFQ |
| 414826-5 | raytheon company | semiconductor device diode | RFQ |
| 7900258-07 | lockheed martin corporation | semiconductor device diode | RFQ |
| JAN1N750A | military specifications | semiconductor device diode | RFQ |
| JAN1N750AA | lacon electronic gmbh | semiconductor device diode | RFQ |
| MIL-PRF-19500/127 | military specifications | semiconductor device diode | RFQ |
| 19019-1876 | atlantic inertial systems limited | semiconductor device diode | RFQ |
| 1N750A | military specifications | semiconductor device diode | RFQ |
| 353-2977-000 | rockwell collins aerospace | semiconductor device diode | RFQ |
| 4178600-140 | raytheon company | semiconductor device diode | RFQ |
| 1N750A | morris material handling inc | semiconductor device diode | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 20.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | GLASS INCLOSURE |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ADAV | OVERALL DIAMETER | 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 4.7 MAXIMUM NOMINAL REGULATOR VOLTAGE AND 1.5 MAXIMUM REVERSE VOLTAGE,INSTANTANEOUS |
| CTRD | POWER RATING PER CHARACTERISTIC | 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/127 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5961-00-892-3361, 5961008923361 | ||||
| 5920-01-337-7645 (5920013377645) | 5995-01-688-0358 (5995016880358) | 5935-01-132-7705 (5935011327705) | 5910-00-152-4145 (5910001524145) | |
| 5945-01-363-9722 (5945013639722) | 5975-01-032-9067 (5975010329067) | 5998-01-433-6008 (5998014336008) | 5970-01-298-0394 (5970012980394) | |
| 5998-01-674-4887 (5998016744887) | 5935-01-294-4644 (5935012944644) | 5975-01-216-8288 (5975012168288) | 5915-00-412-1691 (5915004121691) | |
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