| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-985-4900 (009854900) |
| NCB Code | USA (00) |
| Manufacturer | Bkc Inc, Adelco Elektronik Gmbh, Transistor Devices Inc, Litton Systems Inc, General Dynamics Land Systems Inc, Honeywell International Inc, Freescale Semiconductor Inc, Raytheon Company, Nimikkeistokeskus Ncb Finland, General Semiconductor Inc, Northrop Grumman Systems Corporation, Bae Systems Inc, Leslie Controls Inc, Rohde And Schwarz Inc, Eca Etablissement Central Des, Military Specifications, Inspektorat Wsparcia Sil Zbrojnych, Bae Systems Controls Inc, United States Department Of The Army, Rockwell Collins Aerospace |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| 1N647 | bkc inc | semiconductor device diode | RFQ |
| JAN1N647A | adelco elektronik gmbh | semiconductor device diode | RFQ |
| 201298-1 | transistor devices inc | semiconductor device diode | RFQ |
| 947060-6470 | litton systems inc | semiconductor device diode | RFQ |
| 904804 | general dynamics land systems inc | semiconductor device diode | RFQ |
| 2802639-1 | honeywell international inc | semiconductor device diode | RFQ |
| 1N647 | freescale semiconductor inc | semiconductor device diode | RFQ |
| 55360-3 | raytheon company | semiconductor device diode | RFQ |
| 10318227 | nimikkeistokeskus ncb finland | semiconductor device diode | RFQ |
| JAN1N647 | general semiconductor inc | semiconductor device diode | RFQ |
| GS810AE1 | northrop grumman systems corporation | semiconductor device diode | RFQ |
| 134538-003 | bae systems inc | semiconductor device diode | RFQ |
| 1301313-2 | honeywell international inc | semiconductor device diode | RFQ |
| 30219N PC 1K | leslie controls inc | semiconductor device diode | RFQ |
| 0826537 | rohde and schwarz inc | semiconductor device diode | RFQ |
| 5961009854900 | eca etablissement central des | semiconductor device diode | RFQ |
| JAN1N647 | military specifications | semiconductor device diode | RFQ |
| 5961PL0835077 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | RFQ |
| 1N647 | military specifications | semiconductor device diode | RFQ |
| MIL-S-19500/240 | military specifications | semiconductor device diode | RFQ |
| 1093-602 | bae systems inc | semiconductor device diode | RFQ |
| 691C891P7 | bae systems controls inc | semiconductor device diode | RFQ |
| 1N647 | bae systems inc | semiconductor device diode | RFQ |
| 617834-11 | raytheon company | semiconductor device diode | RFQ |
| Z617 | united states department of the army | semiconductor device diode | RFQ |
| 055360-3 | raytheon company | semiconductor device diode | RFQ |
| MIL-PRF-19500/240 | military specifications | semiconductor device diode | RFQ |
| 353-2852-000 | rockwell collins aerospace | semiconductor device diode | RFQ |
| 019-003676-346 | northrop grumman systems corporation | semiconductor device diode | RFQ |
| 1N673 | military specifications | semiconductor device diode | RFQ |
| 4178600-207 | raytheon company | semiconductor device diode | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM |
| AGAV | END ITEM IDENTIFICATION | GUN,5-IN./54 CAL,MK-42 AND 45; TEST CONSOLES; GUIDED MISSILE LAUNCHING SYSTEM; HARPOON MISSILE; TACTICAL DATA SYSTEM,AN/UYA-4; COMPUTER DISPLAY SET; GUN FIRE CONTROL SYSTEM,MK 68; LOS ANGELES CLASS SSN (688); STURGEON CLASS SSN (637) |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CRTL | CRITICALITY CODE JUSTIFICATION | FEAT |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 480.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 150.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
| FEAT | SPECIAL FEATURES | WEAPON SYSTEM ESSENTIAL |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/240 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5961-00-985-4900, 5961009854900 | ||||
| 5920-01-337-7645 (5920013377645) | 5995-01-688-0358 (5995016880358) | 5935-01-132-7705 (5935011327705) | 5910-00-152-4145 (5910001524145) | |
| 5945-01-363-9722 (5945013639722) | 5975-01-032-9067 (5975010329067) | 5998-01-433-6008 (5998014336008) | 5970-01-298-0394 (5970012980394) | |
| 5998-01-674-4887 (5998016744887) | 5935-01-294-4644 (5935012944644) | 5975-01-216-8288 (5975012168288) | 5915-00-412-1691 (5915004121691) | |
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