| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 01-105-0607 (011050607) |
| NCB Code | USA (01) |
| Manufacturer | Electronic Industries Inc, General Dynamics Information Systems, Trw Electronic Components, Freescale Semiconductor Inc, Hamilton Sundstrand Corporation, Magnetic Peripherals Inc, Military Specifications, Raytheon Company, Microsemi Corporation, Efratom Time And Frequency Products Inc, Hewlett-Packard Company, Aero Systems Engineering Inc, Cohu Inc, Inspektorat Wsparcia Sil Zbrojnych, Lockheed Martin Corporation, L 3 Communications Corporation, Eldec Corporation, Nimikkeistokeskus Ncb Finland, Dla Land And Maritime, Williams Hydraulic Service, Northrop Grumman Systems Corporation, Honeywell International Inc, Syntegra Usa Inc, Rockwell Collins Aerospace |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| 1N6083D | electronic industries inc | semiconductor device diode | RFQ |
| 50240105 | general dynamics information systems | semiconductor device diode | RFQ |
| RELEASE6606 | electronic industries inc | semiconductor device diode | RFQ |
| 1N6083D | trw electronic components | semiconductor device diode | RFQ |
| 1N750A | freescale semiconductor inc | semiconductor device diode | RFQ |
| 5E4820-51-1008 | hamilton sundstrand corporation | semiconductor device diode | RFQ |
| 50240105-2 | magnetic peripherals inc | semiconductor device diode | RFQ |
| AN1N750A | military specifications | semiconductor device diode | RFQ |
| 70943102002 | raytheon company | semiconductor device diode | RFQ |
| 1N5230 | freescale semiconductor inc | semiconductor device diode | RFQ |
| 1N750A | microsemi corporation | semiconductor device diode | RFQ |
| 100964-001 | efratom time and frequency products inc | semiconductor device diode | RFQ |
| 1902-3085 | hewlett-packard company | semiconductor device diode | RFQ |
| 100435-008 | aero systems engineering inc | semiconductor device diode | RFQ |
| 356888-1 | raytheon company | semiconductor device diode | RFQ |
| 3510036-048 | cohu inc | semiconductor device diode | RFQ |
| 5961PL1397489 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | RFQ |
| JANTX1N750A-1 | military specifications | semiconductor device diode | RFQ |
| 4907923-07 | lockheed martin corporation | semiconductor device diode | RFQ |
| 452303 | l 3 communications corporation | semiconductor device diode | RFQ |
| CR122-22 | eldec corporation | semiconductor device diode | RFQ |
| 10133209 | nimikkeistokeskus ncb finland | semiconductor device diode | RFQ |
| L00962 | dla land and maritime | semiconductor device diode | RFQ |
| 1N5230A | williams hydraulic service | semiconductor device diode | RFQ |
| 019-003502 | northrop grumman systems corporation | semiconductor device diode | RFQ |
| 531477-5 | raytheon company | semiconductor device diode | RFQ |
| 1534864-32 | honeywell international inc | semiconductor device diode | RFQ |
| 50240105-2 | syntegra usa inc | semiconductor device diode | RFQ |
| MIL-PRF-19500/127 | military specifications | semiconductor device diode | RFQ |
| 995-9502-024 | rockwell collins aerospace | semiconductor device diode | RFQ |
| 353-8503-250 | rockwell collins aerospace | semiconductor device diode | RFQ |
| JANTX1N750A | military specifications | semiconductor device diode | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 4.7 NOMINAL NOMINAL REGULATOR VOLTAGE |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 85.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION |
| CTRD | POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/127 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5961-01-105-0607, 5961011050607 | ||||
| 5920-01-337-7645 (5920013377645) | 5995-01-688-0358 (5995016880358) | 5935-01-132-7705 (5935011327705) | 5910-00-152-4145 (5910001524145) | |
| 5945-01-363-9722 (5945013639722) | 5975-01-032-9067 (5975010329067) | 5998-01-433-6008 (5998014336008) | 5970-01-298-0394 (5970012980394) | |
| 5998-01-674-4887 (5998016744887) | 5935-01-294-4644 (5935012944644) | 5975-01-216-8288 (5975012168288) | 5915-00-412-1691 (5915004121691) | |
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