Item Name | Microcircuit Memory |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
National Item Identification Number (NIIN) | 01-288-6901 (012886901) |
NCB Code | USA (01) |
Manufacturer | Dla Land And Maritime, Military Specifications, Raytheon Company, Intersil Corporation, Philips Semiconductors Ltd, Boeing Company The, Northrop Grumman Systems Corporation, Alliant Techsystems Operations Llc, Mmi Amd, Military Standards Corp, Lockheed Martin Corporation, Texas Instruments Inc, National Semiconductor Corporation, Quadri Corp, Raytheon Technical Services Company |
Part Number | Manufacturer | Item Name | RFQ |
---|---|---|---|
ROM PROM HEAD 013 | dla land and maritime | microcircuit memory | RFQ |
M38510/20702BEA | military specifications | microcircuit memory | RFQ |
802986-4 | raytheon company | microcircuit memory | RFQ |
M38510/20702BEX | military specifications | microcircuit memory | RFQ |
56S394-1 | intersil corporation | microcircuit memory | RFQ |
JAN-M38510/20702BEX | military specifications | microcircuit memory | RFQ |
HM1-7603-5 | intersil corporation | microcircuit memory | RFQ |
S82S123F 883 | philips semiconductors ltd | microcircuit memory | RFQ |
477-1649-001 | boeing company the | microcircuit memory | RFQ |
581R137H01 | northrop grumman systems corporation | microcircuit memory | RFQ |
82S123 | philips semiconductors ltd | microcircuit memory | RFQ |
HM1-7603 | intersil corporation | microcircuit memory | RFQ |
5962-3820702BEA | military specifications | microcircuit memory | RFQ |
1201938-203 | alliant techsystems operations llc | microcircuit memory | RFQ |
5962-3820702BEB | military specifications | microcircuit memory | RFQ |
5962-3820702BEX | military specifications | microcircuit memory | RFQ |
MIL-M-38510/207 | military specifications | microcircuit memory | RFQ |
5331-1J883B | mmi amd | microcircuit memory | RFQ |
M38510/20702BEB | military specifications | microcircuit memory | RFQ |
477-1489-002 | military standards corp | microcircuit memory | RFQ |
7908868-02 | lockheed martin corporation | microcircuit memory | RFQ |
5331 1D 883B | mmi amd | microcircuit memory | RFQ |
P161-00012-6029 | northrop grumman systems corporation | microcircuit memory | RFQ |
581R504H21 | northrop grumman systems corporation | microcircuit memory | RFQ |
82S123N | texas instruments inc | microcircuit memory | RFQ |
TBP18S030MJ | texas instruments inc | microcircuit memory | RFQ |
7603-5 | intersil corporation | microcircuit memory | RFQ |
802986-3 | raytheon company | microcircuit memory | RFQ |
1201938 | alliant techsystems operations llc | microcircuit memory | RFQ |
DM54S288J | national semiconductor corporation | microcircuit memory | RFQ |
M38510/20702BEB | philips semiconductors ltd | microcircuit memory | RFQ |
1-2010-0003-21 | quadri corp | microcircuit memory | RFQ |
CW841F | philips semiconductors ltd | microcircuit memory | RFQ |
4014533 | raytheon technical services company | microcircuit memory | RFQ |
581R504H25 | northrop grumman systems corporation | microcircuit memory | RFQ |
308665-2 | northrop grumman systems corporation | microcircuit memory | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 0.840 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.185 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 739.0 MILLIWATTS |
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | PROGRAMMABLE AND BIPOLAR AND PROGRAMMED AND 3-STATE OUTPUT |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 6 INPUT |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510 |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | PROM |
TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-M-38510/207 GOVERNMENT SPECIFICATION |
Relevant Components for NSN - 5962-01-288-6901, 5962012886901 | ||||
5920-01-337-7645 (5920013377645) | 5995-01-688-0358 (5995016880358) | 5935-01-132-7705 (5935011327705) | 5910-00-152-4145 (5910001524145) | |
5945-01-363-9722 (5945013639722) | 5975-01-032-9067 (5975010329067) | 5998-01-433-6008 (5998014336008) | 5970-01-298-0394 (5970012980394) | |
5998-01-674-4887 (5998016744887) | 5935-01-294-4644 (5935012944644) | 5975-01-216-8288 (5975012168288) | 5915-00-412-1691 (5915004121691) | |
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